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Science/Engineering Terrestrial Neutron-Induced Soft Errors in Advanced Memory Devices

Posted on 2010-03-15




Name:Science/Engineering Terrestrial Neutron-Induced Soft Errors in Advanced Memory Devices
ASIN/ISBN:9812778810
Language:English
File size:12 Mb
ISBN: 9812778810
Publish Date: 2008-03-28
File Type: PDF
Pages: 368 pages
File Size: 12 Mb
Other Info: World Scientific Publishing Company
   Science/Engineering Terrestrial Neutron-Induced Soft Errors in Advanced Memory Devices

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Terrestrial Neutron-Induced Soft Errors in Advanced Memory Devices

Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices.

This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features.

Contents: Terrestrial Neutron Spectrometry and Dosimetry; Irradiation Testing in the Terrestrial Field; Neutron Irradiation Test Facilities; Review and Discussion of Experimental Data; Monte Carlo Simulation Methods; Simulation Results and Their Implications; International Standardization of the Neutron Test Method; Summary and Challenges.

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