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Science/Engineering Identification of Defects in Semiconductors

Posted on 2010-04-14




Name:Science/Engineering Identification of Defects in Semiconductors
ASIN/ISBN:0127521658
Publish Date:Academic Press (November 3, 1998)
Language:English
Pages:434 pages
File size:18.46 Mb
Language: English
Pages: 434 pages
File Type: PDF
File Size: 18.46 MB
Other Info: Academic Press (November 3, 1998); 0127521658
   Science/Engineering Identification of Defects in Semiconductors

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Michael Stavola, Robert K. Willardson, Eicke R. Weber, "Identification of Defects in Semiconductors (Semiconductors and Semimetals, Volume 51B)"

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.

Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

This volume has contributions on Advanced Characterization Techniques with a focus on defect identification. The combination of beam techniques with electrical and optical characterization has not been discussed elsewhere.

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