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Science/Engineering Very High Speed Integrated Circuits: Gallium Arsenide LSI (Semiconductors and Semimetals)
Posted on 2010-03-15
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More Very High Speed Integrated Circuits: Gallium Arsenide LSI (Semiconductors and Semimetals) By Toshiaki Ikoma Publisher: Academic Press Number Of Pages: 309 Publication Date: 1990-05 ISBN-10 / ASIN: 0127521291 ISBN-13 / EAN: 9780127521299 Binding: Hardcover Preface Very high speed integrated circuits are important for supercomputers and for digital communications (e.g., integrated digital networks and mobile land communications). Although silicon integrated circuit technologies are progressing into a submicron range of the scaling rule and the nanosecond range of operational speed, silicon itself has a limit of low mobility as compared with gallium arsenide and with some of the other 111-V semiconductors. Moreover, the existence of the gallium arsenide semi-insulating substrate allows the reduction of parasitic circuit elements in integrated circuits; hence, gallium arsenide integrated circuits have an advantage over a p-n junction isolation used in silicon LSIs. Gallium arsenide LSIs are thus expected to be superior to silicon LSIs in terms of speed and power dissipation, and they have been developed intensively. ...
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