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Science/Engineering Stress and Strain in Epitaxy: Theoretical Concepts, Measurements and Applications

Posted on 2010-03-16




Name:Science/Engineering Stress and Strain in Epitaxy: Theoretical Concepts, Measurements and Applications
ASIN/ISBN:0444508651
Language:English
File size:15 Mb
Publisher: Elsevier
Pages: 450
Publish Date: 2001-07-01
ISBN: 0444508651
File Type: PDF
File Size: 15 MB
   Science/Engineering Stress and Strain in Epitaxy: Theoretical Concepts, Measurements and Applications

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Stress and Strain in Epitaxy: Theoretical Concepts, Measurements and Applications

This book contains keynote lectures which have been delivered at the 3rd Porquerolles' School on Surface Science, SIR2000 (Surfaces-Interfaces-Relaxation). The aim of this school was to review the main concepts necessary to understand the role of interfacial stress, strain and relaxation in crystal growth by heteroepitaxy. By bringing together scientists from various fields (physics, chemistry, materials science and engineering) which daily use complementary methodological approaches (experiment, theory, modelization), the school allowed to offer 11 multidisciplinary courses. This book addresses the state of art of stress in epitaxial materials, it describes the various methods to measure the atomic displacement and stress fields, it reviews the spectroscopic methods necessary to map the interface chemistry, it details the theoretical methods and concepts which are needed to predict them and it questions the fact that stress and relaxation can induce specific properties in magnetism, catalysis, electron transport and so on.

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