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Technical Operation and Modeling of the MOS Transistor - 2003

Posted on 2010-03-15




Name:Technical Operation and Modeling of the MOS Transistor - 2003
ASIN/ISBN:0195170148
Language:English
File size:12 Mb
   Technical Operation and Modeling of the MOS Transistor - 2003

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Hardcover: 640 pages

Publisher: Oxford University Press, USA; 2 edition (June 21, 2003)

Language: English

ISBN-10: 0195170148

ISBN-13: 978-0195170146

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Book Description

Extensively revised and updated, this, the second edition of the highly praised text Operation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips. KEY FEATURES BLUnified, careful treatment. The book covers in depth the development of many important models, ranging from the simple to the sophisticated, with the connection between models clearly identified. Many aspects of modeling are covered, including: dc, ac, small-signal, large-signal transient, quasi-static, nonquasi-static, and noise. BLExpanded coverage. New material is included on a number of topics, including charge sheet models, small-dimension effects, noise, and modeling for RF applications. BLNew chapter on modeling for CAD. A completely new chapter discusses the context, considerations, and pitfalls associated with the development of models for computer-aided design, and describes ways to evaluate them. BLExtensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided.

About the Author

Yannis Tsvidis is at Colombia University.

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