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Physics Microlithography/Molecular Imprinting (Advances in Polymer Science): Kobayashi, T.

Posted on 2010-04-13




Name:Physics Microlithography/Molecular Imprinting (Advances in Polymer Science): Kobayashi, T.
ASIN/ISBN:3540218629
Language:English
File size:3.78 Mb
ISBN: 3540218629
Publish Date: 2005
File Type: PDF (OCR)
Pages: 276 pages
File Size: 3.78 Mb
Other Info: Springer
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Microlithography/Molecular Imprinting (Advances in Polymer Science): Kobayashi, T.

Table of Contents: Molecular Imprinting: State of the Art and Perspectives

J.D. Marty, M. Mauzac

1(36)

1 Introduction

2(2)

2 MIP Materials

4(10)

2.1 The Different Stages Involved in the Preparation of the Materials

5(8)

2.1.1 Preorganisation Stage

5(5)

2.1.2 Step of Polymerisation-Crosslinking of the Monomers Around the Complex Formed in the First Step

10(2)

2.1.3 Template Molecule Extraction Stage

12(1)

2.2 Influence of the Solvent

13(1)

3 Recognition Properties

14(3)

3.1 Guest Capacity

14(1)

3.2 Specificity of Recognition

14(2)

3.3 Lifetime of the MIPs

16(1)

4 Main Uses of Imprinted Polymers

17(5)

4.1 Separation of Molecules

17(2)

4.2 Preparation of Antibody Analogues

19(1)

4.3 Sensors

20(1)

4.4 Stereoselective Reactions and Catalysis

20(2)

5 Summary and Outlook

22(7)

5.1 Molecularly Imprinted Hydrogels

24(1)

5.2 Two-Dimensional Molecular Imprinting

24(2)

5.3 Liquid Crystalline Imprinted Materials

26(3)

6 Conclusion

29(1)

References

30(7)

Chemical Amplification Resists for Microlithography

H. Ito

37(4)

1 Introduction

41(6)

2 Chemical Amplification Concept

47(1)

3 Photochemical Acid Generators

48(5)

4 Chemically Amplified Imaging Mechanisms

53

4.1 Deprotection

54(85)

4.1.1 Carbonates

55(7)

4.1.2 Esters and Ethers

62(2)

4.1.3 Hydrolysis

64(1)

4.1.4 Polyhydroxystyrenes

65(5)

4.1.5 Copolymers

70(10)

4.1.6 Blends and Dissolution Inhibitors

80(5)

4.1.7 Deprotection Involving Ring-Opening (Mass Persistent Resists)

85(1)

4.1.8 Dendritic Polymers and Small Amorphous Materials

86(2)

4.1.9 Evolution of 248 nm Positive Resists

88(9)

4.1.10 Polymethacrylates and Norbornene Polymers for 193 nm Lithography

97(24)

4.1.11 Fluoropolymers for 157 nm Lithography

121(16)

4.1.12 Resists for Next Generation Lithography

137(2)

4.2 Depolymerization

139(7)

4.2.1 Thermodynamically-Driven Depolymerization

140(5)

4.2.2 Repeated Catalytic Main Chain Scission

145(1)

4.3 Rearrangement

146(5)

4.3.1 Polarity Reversal

146(2)

4.3.2 Claisen Rearrangement

148(1)

4.3.3 Pinacol Rearrangement

149(2)

4.4 Intramolecular Dehydration

151(1)

4.5 Condensation/Intermolecular Dehydration

152(9)

4.6 Esterification

161(3)

4.7 Polymerization/Crosslinking

164(2)

5 Environmentally Friendly Processes

166(1)

5.1 Water-Processable Resists (Casting and Development)

166(6)

5.2 CO2-Processable Resists (Casting, Development, Rinse, and Strip)

172(3)

6 Bilayer Lithography and Top-Surface Imaging

175(2)

6.1 Bilayer Lithography with Organosilicon Resists

177(11)

6.1.1 Semi-Dry Bilayer Lithography (Wet Development/02 RIE Pattern Transfer)

178(6)

6.1.2 All-Dry Bilayer Lithography

184(4)

6.2 Silylation of Organic Resists

188(13)

6.2.1 Reaction-Controlled Silylation

188(4)

6.2.2 Diffusion-Controlled Silylation

192(2)

6.2.3 Bilayer Silylation

194(1)

6.2.4 Silylation after Wet Development

195(3)

6.2.5 Flood Silylation/Imagewise Desilylation

198(1)

6.2.6 Surface Modification

198(3)

6.3 Process Issues in Bilayer and Dry Lithographic Techniques

201(1)

7 Resist Characterization

202(1)

7.1 Molecular Weight Determination

203(1)

7.2 Thermal Analysis

203(1)

7.3 Spectroscopic Analysis

204(3)

7.3.1 UV Spectroscopy

204(1)

7.3.2 NMR Spectroscopy

205(1)

7.3.3 IR Spectroscopy

206(1)

7.3.4 Mass Spectroscopy

207(1)

7.4 Surface Analysis

207(1)

7.5 Neutron Scattering

208(1)

7.6 Neutron and X-Ray Reflectometry

208(1)

7.7 "C Labeling/Scintillation

208(1)

7.8 Laser Interferometry

208(1)

7.9 Quartz Crystal Microbalance

209(2)

7.10 Measurements of Optical Properties of Films

211(1)

8 Resist Performance Parameters

212(1)

8.1 Resist Sensitivity and Contrast

212(1)

8.2 Linear Resolution

213(1)

8.3 Depth of Focus (DOF) or Focus Latitude

214(1)

8.4 Exposure Latitude (Dose Latitude)

215(1)

8.5 Resist Image Profiles

216(1)

8.6 Isolated-Nested Bias

216(1)

8.7 PEB and PED Stability

217(1)

8.8 Line Edge Roughness

217(1)

8.9 Dry Etch Resistance

217(1)

9 Resolution Limit - Acid Diffusion/Image Blur

217(4)

10 Closing Remarks and Future Perspectives

221(2)

References 223(24)

Author Index Volumes 101-172 247

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