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Science/Engineering Martin v. Haartman - Low-Frequency Noise in Advanced MOS Devices

Posted on 2010-03-16




Name:Science/Engineering Martin v. Haartman - Low-Frequency Noise in Advanced MOS Devices
ASIN/ISBN:1402059094
Language:English
File size:5.19 Mb
Publish Date: 2007
ISBN: 1402059094
Pages: 216
File Type: PDF
File Size: 5.19 MB
Other Info: Springer
   Science/Engineering Martin v. Haartman - Low-Frequency Noise in Advanced MOS Devices

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Martin v. Haartman - Low-Frequency Noise in Advanced MOS Devices

Low-Frequency Noise in Advanced CMOS Devices begins with an introduction to noise, describing the fundamental noise sources and basic circuit analysis. The characterization of low-frequency noise is discussed in detail and useful practical advice is given. The various theoretical and compact low-frequency (1/f) noise models in MOS transistors are treated extensively providing an in-depth understanding of the low-frequency noise mechanisms and the potential sources of the noise in MOS transistors. Advanced CMOS technology including nanometer scaled devices, strained Si, SiGe, SOI, high-k gate dielectrics, multiple gates and metal gates are discussed from a low-frequency noise point of view. Some of the most recent publications and conference presentations are included in order to give the very latest view on the topics. The book ends with an introduction to noise in analog/RF circuits and describes how the low-frequency noise can affect these circuits.

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