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Science/Engineering Intense Terahertz Excitation of Semiconductors

Posted on 2010-03-15




Name:Science/Engineering Intense Terahertz Excitation of Semiconductors
ASIN/ISBN:0198528302
Language:English
File size:16.2 Mb
ISBN: 0198528302
Pages: 434 pages
File Size: 16,2 Mb
Other Info: Oxford University Press, USA (January 28, 2006)
   Science/Engineering Intense Terahertz Excitation of Semiconductors

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S. G. Ganichev , W. Prettl, "Intense Terahertz Excitation of Semiconductors"

Review

`...a useful book...in a strongly growing research area. ' Arthur Gossard, University of California at Santa Barbara

`...important and topical...with a good range of topics...and an audience amoung semiconductor physicists, but also advanced students who are interested in terahertz electronics and high-power terahertz research. ' Carl Pidgeon, Heriot Watt University, Edinburgh

Book Description

iIntense Terahertz Excitation of Semiconductors/i presents the first comprehensive treatment of high-power terahertz applications to semiconductors and low-dimensional semiconductor structures. Terahertz properties of semiconductors are in the left of scientific activities because of the need of high-speed electronics. This research monograph brigdes the gap between microwave physics and photonics. It focuses on a core topic of semiconductor physics providing a full description of the state of the art of the field. _ The reader is introduced to new physical phenomena which occur in the terahertz frequency range at the transition from semi-classical physics with a classical field amplitude to the fully quantized limit with photons. The book covers a wide range of optical, optoelectronic, and nonlinear transport processes, presenting experimental results, clearly visualizing models and basic theories. Background information for future work and exhaustive references of current literature are given. A particularly valuable feature is through the discussion of various technical aspects of the terahertz range like the generation of high-power coherent radiation, optical components, instrumentation, and detection schemes of short intense radiation impulses. The book complements, for the first time in form of a monograph, previous books on infrared physics which dealt with low-power optical and opto-electronic processes. It will be useful not only to scientists but also to advanced students who are interested in terahertz research.

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