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Publisher: Noyes Publications (2001)


Binding: Hardcover, 420 pages


pricer: $185.00


ISBN-10: 0815514425


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This new second edition traces the technology behind the spectacular growth in the silicon semiconductor industry and the continued trend in miniaturization over the last 20 years. This growth has been fueled in large part by improved thin film deposition techniques and the development of highly specialized equipment to enable this deposition. The book includes much cutting-edge material. Entirely new chapters on contamination and contamination control describe the basics and the issues -- as feature sizes shrink to sub-micron dimensions, cleanliness and particle elimination has to keep pace. A new chapter on meterology explains the growth of sophisticated, automatic tools capable of measuring thickness and spacing of sub-micron dimensions. The book also covers PVD, laser and E beam assisted deposition, MBE, and ion beam methods to bring together all the physical vapor deposition techniques. Two entirely new areas receive full treatment: chemical mechanical polishing which helps attain the flatness that is required by modern lithography methods, and new materials used for interconnect dielectric materials, specifically organic polyimide materials. Key Features: - All-new material on dielectric CVD methods, feature scale modeling, silicon metrology, contamination and contamination control, physical vapor deposition, CMP, and organic dielectrics - Guide provides all the information needed to understand new developments and requirements in the field as semiconductors get smaller and smaller - Preserves several classic chapters from the first edition showing the fundamentals of growing epitaxial silicon -- which have remained the same - Chapter on feature scale modeling examines design rules for metal height and spacing to avoid porosity and pinholes that later compromise reliability




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