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Science/Engineering Handbook of Nitride Semiconductors and Devices, Volume 1: Materials Properties, Physics and Growth

Posted on 2010-03-16




Name:Science/Engineering Handbook of Nitride Semiconductors and Devices, Volume 1: Materials Properties, Physics and Growth
ASIN/ISBN:3527408371
Language:English
File size:13.9 Mb
Publish Date: 2008
ISBN: 3527408371
Pages: 1311 pages
File Type: PDF
File Size: 13,9 MB
Other Info: Wiley-VCH
   Science/Engineering Handbook of Nitride Semiconductors and Devices, Volume 1: Materials Properties, Physics and Growth



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Hadis Morkoç, "Handbook of Nitride Semiconductors and Devices, Volume 1: Materials Properties, Physics and Growth"

The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.

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