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Daniel M. Fleetwood, Sokrates T. Pantelides, "Defects in Microelectronic Materials and Devices"

Product Description

Focusing primarily on silicon-based microelectronics, Defects in Microelectronic Materials and Devices provides a comprehensive overview of recent progress in understanding of the effects of electrically active defects in microelectronic materials. This book places particular emphasis on defects that limit device quality, reliability, manufacturability, and radiation response. Notable theorists and researchers present their perspectives on defects in insulators and in semiconductors as well as hydrogen and defect-related failure mechanisms. The text also discusses compound semiconductor materials for microelectronic applications and results from physics and engineering models.

Defects in microelectronic materials can profoundly affect the yield, performance, longterm

reliability, and radiation response of microelectronic devices and integrated circuits

(ICs). This book provides a comprehensive survey of defects in silicon-based metal oxide

semiconductor (MOS) field-effect transistor technologies, which dominate the worldwide

microelectronics marketplace. This book also discusses the defects in linear bipolar technologies,

silicon carbide based devices, and gallium arsenide materials and devices. An

appendix is provided with supplemental material on highly cited papers on defects in

these and other materials systems (e.g., GaN, ZnO, C) that are being investigated

for present and future microelectronics technologies. The chapters described below

summarize decades of experience in characterizing defect properties and their impact on

microelectronic devices, and also look forward to the challenges that will have to be

overcome as new materials (e.g., high-K gate dielectrics and high-mobility substrate

materials) are incorporated into increasingly more highly scaled devices and ICs.

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